Fast switching Schottky diode JSCJ SD103AWS with low forward voltage drop and transient protection
Key Attributes
Model Number:
SD103AWS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1.5A
Reverse Leakage Current (Ir):
5uA@30V
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
SD103AWS
Package:
SOD-323
Product Description
Product Overview
The SD103AWS/SD103BWS/SD103CWS are Schottky barrier diodes featuring low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low reverse capacitance. These diodes are ideal for applications requiring fast switching and low power loss.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate Diodes
- Marking: SD103AWS: S4, SD103BWS: S5, SD103CWS: S6
Technical Specifications
| Parameter | Symbol | SD103AWS | SD103BWS | SD103CWS | Unit | Conditions |
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 40 30 20 | V | |||
| RMS Reverse Voltage | VR(RMS) | 28 | 21 | 14 | V | |
| Forward Continuous Current | IFM | 350 | mA | |||
| Non-repetitive Peak Forward Surge Current | IFSM | 1.5 | A | @t 1s | ||
| Power Dissipation | Pd | 200 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |||
| Reverse breakdown voltage | V(BR)R | 40 | 30 | 20 | V | IR=100A |
| Forward voltage | VF | 0.37 | V | IF=20mA | ||
| Forward voltage | VF | 0.60 | V | IF=200mA | ||
| Reverse current | IRM | 5.0 | A | VR=10V | ||
| Reverse current | IRM | 5.0 | A | VR=20V | ||
| Reverse current | IRM | 5.0 | A | VR=30V | ||
| Capacitance between terminals | CT | 50 | pF | VR=0V,f=1.0MHz | ||
| Reverse recovery time | trr | 10 | ns | IF=IR=200mA Irr=0.1XIR,RL=100 | ||
| Storage Temperature | TSTG | -55~+150 | ||||
| Junction Temperature | Tj | 125 | ||||
2410121448_JSCJ-SD103AWS_C8607.pdf
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