Low forward resistance RF diode JSCJ BAP64-04 suitable for switching and attenuation in SOT23 package

Key Attributes
Model Number: BAP64-04
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@175V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
175V
Voltage - Forward(Vf@If):
1.1V@50mA
Current - Rectified:
100mA
Mfr. Part #:
BAP64-04
Package:
SOT-23
Product Description

Product Overview

The BAP64-04, 05, and 06 are high voltage, current-controlled pin diodes designed for RF applications up to 3 GHz. They function as RF resistors in attenuators and switches, offering low diode capacitance, low forward resistance, and low series inductance. These diodes are available in SOT-23 packages.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Material: Plastic-Encapsulate Diodes
  • Color: Solid dot = Green molding compound device, if none, the normal device.
  • Origin: China (implied by manufacturer location)

Technical Specifications

ParameterSymbolBAP64-04/05/06UnitConditions
Continuous reverse voltageVR175V
Continuous forward currentIF100mA
Power dissipationPD250mWTa=25
Thermal resistance junction to ambientRJA500/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55 ~ +150
Forward VoltageVF1.1VIF=50mA
Reverse CurrentIR110VR1=175V
Reverse CurrentIR21AVR2=20V
Diode CapacitanceCd10.52pFVR=0V, f=1MHz
Diode CapacitanceCd20.5pFVR=1V,f=1MHz
Diode CapacitanceCd30.35pFVR=20V,f=1MHz
Diode Forward ResistanceRd140IF=0.5mA, f=100MHz
Diode Forward ResistanceRd220IF=1mA, f=100MHz
Diode Forward ResistanceRd33.8IF=10mA, f=100MHz
Diode Forward ResistanceRd41.35IF=100mA, f=100MHz
Charge Carrier Life TimeL1.55sWhen switched from IF =10mA to IR=6mA;RL=100;measured at IR =3mA
Series InductanceLS1.4nHIF=10mA, f=100MHz

2410121714_JSCJ-BAP64-04_C5295580.pdf

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