Power Conversion Schottky Diode JSCJ SBDD10200CT Featuring Low Forward Voltage Drop and High Current
Key Attributes
Model Number:
SBDD10200CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Leakage Current (Ir):
1uA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
840mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBDD10200CT
Package:
TO-252-2
Product Description
Product Overview
The SBDD10200CT is a Schottky Barrier Rectifier designed for low power loss and high efficiency applications. It offers high current capability and a low forward voltage drop, making it suitable for various power conversion circuits. The device features guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBDD10200CT
- Marking: D10200CT
- Package Type: TO-252-2L
- Molding Compound: Green (if solid dot present), otherwise normal.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak repetitive reverse voltage | VRRM | 200 | V | |||
| Working peak reverse voltage | VRWM | 200 | V | |||
| DC blocking voltage | VR | 200 | V | |||
| RMS reverse voltage | VR(RMS) | 140 | V | |||
| Average rectified output current | IO | Ta=25 | 10 | A | ||
| Non-Repetitive peak forward surge current | IFSM | 8.3ms half sine wave, Ta=25 | 120 | A | ||
| Thermal resistance from junction to ambient | RJA | 50 | /W | |||
| Junction temperature | Tj | 150 | ||||
| Storage temperature | Tstg | -55 | +150 | |||
| Reverse voltage | V(BR) | IR=0.1mA | 200 | V | ||
| Reverse current | IR | VR=200V, Tj=25 | 1.0 | uA | ||
| Reverse current | IR | VR=200V, Tj=125 | 100 | uA | ||
| Forward voltage | VF | IF=5A, Tj=25 | 0.80 | 0.92 | V | |
| Forward voltage | VF | IF=5A, Tj=125 | 0.67 | 1.0 | V | |
| Forward voltage | VF | IF=10A, Tj=25 | 0.84 | V | ||
| Forward voltage | VF | IF=10A, Tj=125 | 0.72 | V | ||
| Thermal resistance from junction to case | RJC | 2.2 | /W | |||
| Total Capacitance | CTOT | f=1MHz, Tj=25 | 100 | pF |
2410121743_JSCJ-SBDD10200CT_C513353.pdf
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