General Purpose NPN Transistor JSCJ KTC3875GR Featuring High Current Gain and Low Noise Characteristics
Key Attributes
Model Number:
KTC3875GR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
KTC3875GR
Package:
SOT-23
Product Description
KTC3875 TRANSISTOR (NPN)
The KTC3875 is an NPN transistor designed for general-purpose applications. It features high current gain (hFE) and low noise characteristics, making it suitable for various electronic circuits. This transistor is complementary to the KTA1504.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB= 60V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=6V, IC= 2mA | 70 | 700 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB= 10mA | 0.1 | 0.25 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB= 10mA | 1 | V | ||
| Transition frequency | fT | VCE=10V, IC= 1mA | 80 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHZ | 2.0 | 3.5 | pF | |
| Noise figure | NF | VCE=6V,IC=0.1mA,Rg=10k,f=1KHZ | 1.0 | 10 | dB | |
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 150 | mA | |||
| Collector Power Dissipation | PC | 150 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 833 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
2410121908_JSCJ-KTC3875GR_C19269050.pdf
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