High Surge Current Schottky Diode JSCJ BAS70WS Featuring Low Turn On Voltage and Fast Switching Speed

Key Attributes
Model Number: BAS70WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70WS
Package:
SOD-323
Product Description

Product Overview

The BAS70WS is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low turn-on voltage, fast switching, and PN junction guard for transient and ESD protection. The diode is housed in a SOD-323 plastic package with UL Recognition Flammability Classification 94V-O.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Model: BAS70WS
  • Package Type: SOD-323
  • Material: Plastic
  • Certifications: UL Recognition Flammability Classification 94V-O
  • Marking: K73
  • Cathode Indicator: Marking bar
  • Molding Compound: Solid dot = Green molding compound device, if none, the normal device.

Technical Specifications

ParameterSymbolLimitUnitConditions
Peak Repetitive Peak Reverse VoltageVRRM70V
Working Peak Reverse VoltageVRWM70V
DC Blocking VoltageVR70V
Forward Continuous CurrentIF70mA
Non-repetitive Peak Forward Surge CurrentIFSM100mA@t=8.3ms
Power DissipationPD200mW@Ta=25
Thermal Resistance from Junction to AmbientRJA500/W
Forward VoltageVF10.41VIF=1mA
Forward VoltageVF21VIF=15mA
Reverse CurrentIR100nAVR=50V
Capacitance between terminalsCT2pFVR=0V,f=1MHz
Reverse recovery timetrr5nsIF=IR=10mA Irr=0.1XIR,RL=100
Storage TemperatureTSTG-55 ~+150
Junction temperatureTJ125

2410121228_JSCJ-BAS70WS_C77312.pdf

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