Plastic Encapsulated Rectifier Diode JSCJ MURS160 SMAG Super Fast Recovery Diode High Voltage Rating
Key Attributes
Model Number:
MURS160(SMAG)
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.25V@1.0A
Current - Rectified:
1A
Mfr. Part #:
MURS160(SMAG)
Package:
SMAG
Product Description
Product Overview
The MURS120 THRU MURS160 are Super Fast Recovery Rectifier Diodes from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. These SMAG plastic-encapsulated diodes offer high surge current capability and are suitable for rectifier applications. They are available in voltage ratings from 200V to 600V.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate Diodes
- Marking: Color band denotes cathode
- Origin: China (implied by manufacturer name)
Technical Specifications
| Item | Symbol | Unit | Test Condition | MURS120 | MURS140 | MURS160 |
|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | V | 200 | 400 | 600 | |
| Average Forward Current | IF(AV) | A | 1.0 | 1.0 | 1.0 | |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 30 | 30 | 30 |
| Peak Forward Voltage | VFM | V | IFM =1.0A | 0.875 | 1.25 | 1.25 |
| Reverse recovery time | trr | ns | IF=0.5A,IR=1.0A VRM=VRRM | 5 | 5 | 5 |
| Peak Reverse Current | IRRM1 | A | 50 | 50 | 50 | |
| Peak Reverse Current | IRRM2 | A | 60Hz Half-sine wave, Resistance load,Ta=100 | |||
| Maximum RMS Voltage | VRMS | V | 140 | 280 | 420 | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | ||
| Thermal Resistance(Typical) | R J-A | /W | Between junction and ambient | 55 | 55 | 55 |
| Thermal Resistance(Typical) | R J-L | /W | Between junction and lead | 17 | 17 | 17 |
2410121947_JSCJ-MURS160-SMAG_C5356761.pdf
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