Switching diode JSCJ BAS21C featuring 200 volts DC blocking voltage and compact surface mount design
Key Attributes
Model Number:
BAS21C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21C
Package:
SOT-23
Product Description
Product Overview
The BAS21/A/C/S is a high-performance switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. Designed for general-purpose switching applications, it features fast switching speed and a surface mount package ideally suited for automatic insertion. Its high conductance makes it a versatile component for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOT-23 Plastic-Encapsulate
- Marking: JS (BAS21), JS2 (BAS21A), JS3 (BAS21C), JS4 (BAS21S)
- Molding Compound: Solid dot = Green molding compound device, normal device if none.
Technical Specifications
| Parameter | Symbol | BAS21 | BAS21A | BAS21C | BAS21S | Unit |
| Repetitive peak reverse voltage | VRRM | 250 | 400 | 200 | 150 | V |
| Working peak reverse voltage | VRWM | 250 | 400 | 200 | 150 | V |
| DC blocking voltage | VR | 250 | 400 | 200 | 150 | V |
| Forward continuous current | IF | 250 | 400 | 200 | 150 | mA |
| Average rectified output current | IO | 250 | 400 | 200 | 150 | mA |
| Repetitive peak forward surge current | IFSM | 625 | 625 | 625 | 625 | mA |
| Forward Surge Current @t=8.3ms Non-Repetitive Peak | IFRM | 2.5 | 2.5 | 2.5 | 2.5 | A |
| Power dissipation | PD | 555 | 225 | 625 | 2.5 | mW |
| Thermal resistance junction to ambient | RJA | - | - | - | - | /W |
| Junction temperature | TJ | -55~+150 | -55~+150 | -55~+150 | -55~+150 | |
| Storage temperature range | TSTG | -55~+150 | -55~+150 | -55~+150 | -55~+150 | |
| Reverse breakdown voltage (IR=100A) | V(BR) | Min: 250 | Min: 250 | Min: 250 | Min: 250 | V |
| Reverse voltage leakage current (VR=200V) | IR | Max: 0.1 | Max: 0.1 | Max: 0.1 | Max: 0.1 | A |
| Forward voltage (IF=100mA) | VF | Max: 1.000 | Max: 1.000 | Max: 1.000 | Max: 1.000 | V |
| Forward voltage (IF=200mA) | VF | Max: 1.250 | Max: 1.250 | Max: 1.250 | Max: 1.250 | V |
| Diode capacitance (VR=0V, f=1MHz) | CD | Max: 5 | Max: 5 | Max: 5 | Max: 5 | pF |
| Reveres recovery time (IF=IR=30mA,Irr=0.1IR,RL=100) | trr | Max: 50 | Max: 50 | Max: 50 | Max: 50 | ns |
2410121245_JSCJ-BAS21C_C68965.pdf
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