Plastic Encapsulated Fast Recovery Rectifier Diode JSCJ RS1M Suitable for Various Electrical Circuits
Key Attributes
Model Number:
RS1M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@1kV
Reverse Recovery Time (trr):
500ns
Voltage - DC Reverse (Vr) (Max):
1kV
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
RS1M
Package:
SMAG
Product Description
Product Overview
The RS1A through RS1M series are fast recovery rectifier diodes designed for general purpose rectification. They offer high surge current capability and are suitable for various applications requiring efficient rectification and voltage blocking. These diodes are available in a plastic-encapsulated package for surface mounting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name)
- Material: Plastic-Encapsulate Diodes
- Color: Band denotes cathode
- Certifications: None explicitly mentioned
Technical Specifications
| Item | Symbol | Unit | Test Conditions | RS1A | RS1B | RS1D | RS1G | RS1J | RS1K | RS1M |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | |
| Average Forward Current | IF(AV) | A | 60Hz Half-sine wave, Resistance load, TL(Fig.1) | 1.0 | ||||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | ||||||||
| Thermal Resistance(Typical) | RJ-A | /W | Between junction and ambient, P.C.B. Mounted on 0.2"x0.2" (5.0mmx5.0mm)Copper Pad Areas | 50 | ||||||
| Thermal Resistance(Typical) | RJ-L | /W | Between junction and terminal | 5 | ||||||
| Peak Forward Voltage | VF | V | IF=1.0A | 1.3 | ||||||
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Tj=25 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Tj=125 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,IRR=0.25A | 150 | 150 | 150 | 150 | 150 | 150 | 150 |
2410121844_JSCJ-RS1M_C2923894.pdf
Related Products
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
