Low reverse current fast switching diode JSCJ BAS516 in compact SOD523 package for electronic circuits

Key Attributes
Model Number: BAS516
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS516
Package:
SOD-523
Product Description

Product Overview

The BAS516 is a fast switching diode in a SOD-523 plastic encapsulated package. It features a small package size, low reverse current, and fast switching speed, making it ideally suited for automatic insertion in surface mount applications.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Material: Plastic Encapsulate
  • Marking: 61
  • Color: Green molding compound device (indicated by solid dot), normal device (if none)

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Non-Repetitive Peak Reverse VoltageVRM100V
Peak Repetitive Reverse VoltageVRRM75V
Working Peak Reverse VoltageVRWM75V
RMS Reverse VoltageVR(RMS)53V
Average Rectified Output CurrentIO250mA
Power DissipationPD150mW
Thermal Resistance from Junction to AmbientRJA833/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Reverse voltageV(BR)IR=100A75V
Reverse currentIRVR=25V30nA
Reverse currentIRVR=75V1A
Forward voltageVFIF=1mA0.715V
Forward voltageVFIF=10mA0.855V
Forward voltageVFIF=50mA1V
Forward voltageVFIF=150mA1.25V
Total capacitanceCtotVR=0V,f=1MHz1pF
Reverse recovery timetrrIF= IR =10mA, Irr=0.1*IR,RL=1004ns
Non-repetitive Peak Forward Surge CurrentIFSM@t=8.3ms2.0A

2410121322_JSCJ-BAS516_C68968.pdf

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