High Speed Recovery Diode JSCJ MURF20H60 for MOSFET and IGBT Based Power Factor Correction Circuits
Key Attributes
Model Number:
MURF20H60
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA
Non-Repetitive Peak Forward Surge Current:
240A
Reverse Recovery Time (trr):
29ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Pd - Power Dissipation:
54W
Voltage - Forward(Vf@If):
2.5V@20A
Current - Rectified:
20A
Mfr. Part #:
MURF20H60
Package:
TO-220F-2L
Product Description
Product Overview
The MURF20H60 is a HYPERFAST RECTIFIER, FRED designed to improve efficiency in power factor correction (PFC) and output rectification stages of EV/HEV battery charging stations, booster stages of solar inverters, and UPS applications. It is perfectly matched for operation with MOSFETs or high-speed IGBTs, offering ultrafast recovery times, low recovery loss, low forward voltage, and low reverse leakage current.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: MURF20H60
- Package: TO-220F-2L Plastic-Encapsulate Diode
- Marking: MURF20H60 (Device code), Solid dot (Green molding compound device if present)
- Origin: Jiangsu Changjing Electronics Technology Co., Ltd
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| VRRM | Peak Repetitive Reverse Voltage | 600 | V | |||
| VR | DC Blocking Voltage | 600 | V | |||
| IF(AV) | Average Forward Current | (TC=55) | 20 | A | ||
| IF(RMS) | RMS Forward Current | (TC=55) | 28 | A | ||
| IFSM | Non-Repetitive Surge Forward Current | (8.3ms | 240 | A | ||
| PD | Power dissipation | 54 | W | |||
| RJC | Thermal Resistance From Junction to Case | 2.8 | /W | |||
| Tj | Operating Junction Temperature Range | -55 | +175 | |||
| Tstg | Storage Temperature Range | -55 | +175 | |||
| V(BR) | Reverse Voltage | IR=100A | 600 | V | ||
| IR | Reverse Current | VR=600V, Tj=25 | 10 | A | ||
| IR | Reverse Current | VR=600V, Tj=150 | 500 | A | ||
| VF | Forward Voltage | IF=20A, Tj=25 | 2.15 | 2.5 | V | |
| VF | Forward Voltage | IF=20A, Tj=150 | 1.3 | V | ||
| Ctot | Total Capacitance | VR=200V, f=1MHz | 30 | pF | ||
| trr | Reverse Recovery Time | IF=0.5A, IR=1A, Irr=0.25A | 31 | ns | ||
| trr | Reverse Recovery Time | IF=1A, VR=30V, diF/dt =200A/us | 19 | ns | ||
| trr | Reverse Recovery Time | IF=20A, VR=400V, diF/dt=200A/s | 29 | ns | ||
| IRRM | Max. Reverse Recovery Current | IF=20A, VR=400V, diF/dt=200A/s | 2.3 | A | ||
| Qrr | Reverse Recovery Charge | IF=20A, VR=400V, diF/dt=200A/s | 38 | nC | ||
| trr | Reverse Recovery Time | IF=20A, VR=400V, diF/dt=200A/s, Tj=125 | 71 | ns | ||
| IRRM | Max. Reverse Recovery Current | IF=20A, VR=400V, diF/dt=200A/s, Tj=125 | 6 | A | ||
| Qrr | Reverse Recovery Charge | IF=20A, VR=400V, diF/dt=200A/s, Tj=125 | 236 | nC | ||
| trr | Reverse Recovery Time | IF=20A, VR=400V, diF/dt=600A/s, Tj=125 | 40 | ns | ||
| IRRM | Max. Reverse Recovery Current | IF=20A, VR=400V, diF/dt=600A/s, Tj=125 | 17 | A | ||
| Qrr | Reverse Recovery Charge | IF=20A, VR=400V, diF/dt=600A/s, Tj=125 | 367 | nC |
2410122008_JSCJ-MURF20H60_C5355169.pdf
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