Plastic encapsulated JSCJ MMBD914 diode in SOT23 package designed for fast switching electronic uses
Key Attributes
Model Number:
MMBD914
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
300mA
Mfr. Part #:
MMBD914
Package:
SOT-23
Product Description
Product Overview
The MMBD914 is a high-speed switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, encapsulated in a SOT-23 plastic package. It is designed for fast switching applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: MMBD914
- Package Type: SOT-23
- Material: Plastic-Encapsulate
- Marking: 5D
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Peak Reverse Voltage | VRM | 100 | V | |
| VRRM | 100 | V | ||
| VRWM | 100 | V | ||
| VR | 100 | V | DC Blocking Voltage | |
| Average Rectified Output Current | IO | 300 | mA | @Ta=25 |
| Peak Forward Surge Current | IFSM | 0.5 | A | @Ta=25 |
| Power Dissipation | PD | 350 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | @Ta=25 |
| Junction Temperature | Tj | 150 | @Ta=25 | |
| Storage Temperature | TSTG | -55~+150 | @Ta=25 | |
| Reverse Breakdown Voltage | V(BR) | 100 | V | IR=100A |
| Forward Voltage | VF1 | 715 | mV | IF=1mA |
| VF2 | 855 | mV | IF=10mA | |
| VF3 | 1000 | mV | IF=50mA | |
| VF4 | 1250 | mV | IF=150mA | |
| Reverse Current | IR1 | 1 | uA | VR=75V |
| IR2 | 25 | nA | VR=20V | |
| Diode Capacitance | CD | 2 | pF | VR=0,f=1MHz |
| Reverse Recovery Time | trr | 4 | ns | IF =IR=10mA, Irr=0.1*IR |
2410121503_JSCJ-MMBD914_C8517.pdf
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