High speed switching diode JSCJ BAV99S with low capacitance and power dissipation up to 200 milliwatts
Key Attributes
Model Number:
BAV99S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-
Diode Configuration:
2 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
85V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV99S
Package:
SOT-363
Product Description
Product Overview
The BAV99S is a high-speed switching diode offered by JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It features a small plastic package, high switching speed, and low capacitance. This diode is available in a series configuration array with two electrically isolated diodes. Its compact size and performance characteristics make it suitable for various electronic applications requiring fast switching.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-363
- Marking: K1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | |||
| Reverse Voltage | VR | 75 | V | |||
| Forward Current | IF | 150 | mA | |||
| Repetitive Peak Forward Current | IFRM | 450 | mA | |||
| Non-Repetitive Peak Forward Surge Current | IFSM | @ t =8.3ms | 2.5 | A | ||
| Power Dissipation | PD | @ Ta=25 | 200 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Reverse Breakdown Voltage | V(BR) | IR=100A | 75 | V | ||
| Reverse Current | IR | VR=75V | 1 | A | ||
| Forward Voltage | VF | IF=1mA | 0.715 | V | ||
| Forward Voltage | VF | IF=10mA | 0.855 | V | ||
| Forward Voltage | VF | IF=50mA | 1 | V | ||
| Forward Voltage | VF | IF=150mA | 1.25 | V | ||
| Total Capacitance | Ctot | VR=0,f=1MHz | 1.5 | pF | ||
| Reverse Recovery Time | trr | IF= IR=10mA, Irr=0.1IR, RL=100 | 6 | ns |
2410121322_JSCJ-BAV99S_C68987.pdf
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