JSCJ AD BAT54WS Schottky Barrier Diode with Low Forward Voltage AEC Q101 Certified Automotive Grade

Key Attributes
Model Number: AD-BAT54WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
750mA
Reverse Leakage Current (Ir):
2uA@25V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
21V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
100mA
Mfr. Part #:
AD-BAT54WS
Package:
SOD-323
Product Description

Product Overview

The AD-BAT54WS is a Schottky barrier diode from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It is designed for applications requiring extremely high switching speeds and low forward voltage. This diode is AEC-Q101 qualified, indicating its suitability for automotive applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Model: AD-BAT54WS
  • Certifications: AEC-Q101 qualified
  • Marking: L9 (Device code), marking bar indicates cathode

Technical Specifications

ParameterSymbolValueUnitTest Condition
Non-repetitive peak reverse voltageVRM30V
DC block voltageVR21V
Average rectified output currentIO100mA
Continuous forward currentIF200mA
Repetitive peak forward current @ tp < 1.0s, duty cycle < 50%IFRM350mA
Non-repetitive peak forward surge current @ t = 8.3msIFSM750mA
Power dissipationPD200mW
Thermal resistance from junction to ambientRJA500C/W
Operating junction temperature rangeTj-40 ~ 125C
Storage temperature rangeTstg-55 ~ 150C
Reverse breakdown voltageV(BR)30VIR = 100A
Reverse voltage leakage currentIR2.0AVR = 25V
Forward voltageVF1240mVIF = 0.1mA
Forward voltageVF2320mVIF = 1mA
Forward voltageVF3400mVIF = 10mA
Forward voltageVF4500mVIF = 30mA
Forward voltageVF51000mVIF = 100mA
Reverse recovery timetrr5.0nsIF = IR = 10mA, Irr = 1mA, RL = 100
Capacitance between terminalsCT10pFVR = 1V, f = 1MHz

2410121931_JSCJ-AD-BAT54WS_C2975709.pdf

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