Surface Mounted Plastic Encapsulated Diode JSCJ BAV170 High Speed Switching Low Leakage Current

Key Attributes
Model Number: BAV170
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
5nA@75V
Reverse Recovery Time (trr):
3us
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAV170
Package:
SOT-23
Product Description

Product Overview

The BAV170 is a high-speed switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface-mounted circuits. It features low leakage current and high switching speed, making it suitable for low-leakage current applications.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China (implied by company name and location)
  • Material: Plastic-Encapsulated
  • Package Type: SOT-23
  • Marking: JX
  • Website: www.cj-elec.com

Technical Specifications

Symbol Parameter Value Unit Test Conditions
VRRM Repetitive Peak Reverse Voltage 85 V
VR DC Blocking Voltage 75 V
IF (single diode) Forward Current 215 mA
IF (double diode) Forward Current 125 mA
IFRM Repetitive Peak Forward Current 500 mA
IFSM Non-repetitive Peak Forward Surge Current 1.0 A @ t =8.3ms
PD Power Dissipation 250 mW (Ta=25 unless otherwise noted)
RJA Thermal Resistance from Junction to Ambient 500 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
V(BR) Reverse voltage 75 V IR=100A
IR Reverse current 5 nA VR=75V (Ta=25 unless otherwise specified)
VF Forward voltage 0.9 V IF=1mA (Ta=25 unless otherwise specified)
VF Forward voltage 1 V IF=10mA (Ta=25 unless otherwise specified)
VF Forward voltage 1.1 V IF=50mA (Ta=25 unless otherwise specified)
VF Forward voltage 1.25 V IF=150mA (Ta=25 unless otherwise specified)
Ctot Total capacitance 2 pF VR=0,f=1MHz (Ta=25 unless otherwise specified)
trr Reverse recovery time 3 s IF= IR=10mA, Irr=0.1IR, RL=100 (Ta=25 unless otherwise specified)

2410121621_JSCJ-BAV170_C68970.pdf

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