Schottky Barrier Rectifier JSCJ SBD30150CT with Low Forward Voltage Drop and High Current Capability

Key Attributes
Model Number: SBD30150CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@150V
Non-Repetitive Peak Forward Surge Current:
200A
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
900mV@15A
Current - Rectified:
30A
Mfr. Part #:
SBD30150CT
Package:
TO-220-3L
Product Description

Product Overview

The SBD30150CT and SBDF30150CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. The devices feature a guard ring die construction for transient protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: SBD30150CT, SBD(F)30150CT
  • Material: Plastic-Encapsulate Diode
  • Color: Solid dot = Green molding compound device if none, the normal device

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnitSBD30150CTSBDF30150CT
Peak repetitive reverse voltageVRRM150V
Working peak reverse voltageVRWM150V
DC blocking voltageVR150V
RMS reverse voltageVR(RMS)105V
Average rectified output currentIO30 (2x15)A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM200A
Thermal resistance from junction to ambientRJA62.5/W
Junction temperatureTj150
Storage temperatureTstg-55+150
Reverse voltageV(BR)IR = 1mA150V
Reverse currentIRVR = 150V5.0uA
Forward voltageVFIF = 15A0.680.80VTj=25
Forward voltageVFIF = 15A0.74VTj=125
Forward voltageVFIF = 10A0.84VTj=25
Forward voltageVFIF = 10A0.90VTj=125
Thermal resistance from junction to caseRJcTc=252.03.0/W
Total CapacitanceCTOTf = 1 MHz, Tj = 25100pF

2410121814_JSCJ-SBD30150CT_C496871.pdf

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