general purpose rectifier diode JSCJ S8G designed for stable operation under high surge current conditions
Key Attributes
Model Number:
S8G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
10uA@400V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
400V
Voltage - Forward(Vf@If):
1V@8A
Current - Rectified:
8A
Mfr. Part #:
S8G
Package:
SMCG
Product Description
General Purpose Rectifier Diodes
High surge current capability general purpose rectifier diodes designed for various applications including rectification. These diodes offer robust performance with a wide voltage range and excellent surge handling.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Series: S8A THRU S8M
- Package: SMCG
- Marking: X: From A To M
- Polarity: Color band denotes cathode
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Technical Specifications
| Item | Symbol | Unit | Test Conditions | S8 A | S8 B | S8 D | S8 G | S8 J | S8 K | S8 M |
| Maximum RMS Voltage | VRM | V | 50 | 70 | 100 | 140 | 200 | 280 | 400 | |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 70 | 100 | 140 | 200 | 280 | 400 | |
| Average Forward Current | IF(AV) | A | TC =50, 60Hz Half-sine waveResistance load | 8.0 | 8.0 | 8.0 | 8.0 | 8.0 | 8.0 | 8.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave1 cycleTa=25 | 13 | 13 | 13 | 13 | 13 | 13 | 13 |
| Peak Forward Voltage | VF | V | IF =8.0A, T=25 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =125 | 47 | 47 | 47 | 47 | 47 | 47 | 47 |
| Thermal Resistance(Typical) | RJ-A | / W | Between junction and ambient, mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper pad areas | 250 | 250 | 250 | 250 | 250 | 250 | 250 |
| Thermal Resistance(Typical) | RJ-L | / W | Between junction and lead | 13 | 13 | 13 | 13 | 13 | 13 | 13 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 |
2410121849_JSCJ-S8G_C5292855.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
