Schottky Rectifier JSCJ SBD10150CT with 150 Volt Peak Reverse Voltage and Guard Ring Die Construction
Key Attributes
Model Number:
SBD10150CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Leakage Current (Ir):
100uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
870mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBD10150CT
Package:
TO-220-3L
Product Description
Product Overview
The SBD10150CT and SBDF10150CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. These rectifiers feature a Guard Ring Die Construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBD10150CT, SBD(F)10150CT
- Marking: SBD10150CT XXXX, SBD F10150CT XXXX
- Molding Compound: Green molding compound device (Solid dot) if applicable, otherwise normal device.
- Package: TO-220-3L/TO-220F Plastic-Encapsulate Diode
Technical Specifications
| Parameter | Symbol | Test conditions | Unit | SBD10150CT | SBDF10150CT |
| Peak repetitive reverse voltage | VRRM | V | 150 | 150 | |
| Working peak reverse voltage | VRWM | V | 150 | 150 | |
| DC blocking voltage | VR | V | 150 | 150 | |
| RMS reverse voltage | VR(RMS) | V | 105 | 105 | |
| Average rectified output current | IO | A | 10 | 10 | |
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | A | 120 | 120 | |
| Thermal resistance from junction to ambient | RJA | /W | 62.5 | 62.5 | |
| Junction temperature | Tj | 150 | 150 | ||
| Storage temperature | Tstg | -55~+150 | -55~+150 | ||
| Reverse voltage | V(BR) | IR=1mA | V | 150 | 150 |
| Reverse current | IR | VR=150V, Tj=25 | uA | 1.0 | 1.0 |
| Reverse current | IR | VR=150V, Tj=125 | mA | 0.2 | 0.2 |
| Forward voltage | VF | IF=5A, Tj=25 | V | 0.64 | 0.64 |
| Forward voltage | VF | IF=5A, Tj=125 | V | 0.78 | 0.78 |
| Forward voltage | VF | IF=10A, Tj=25 | V | 0.75 | 0.75 |
| Forward voltage | VF | IF=10A, Tj=125 | V | 0.87 | 0.87 |
| Thermal resistance from junction to case | RJc | Tc=25 | /W | 2.0 | 2.0 |
| Total Capacitance | CTOT | VR=10V, f=1MHz, Tj=25 | pF | 100 | 100 |
2410121814_JSCJ-SBD10150CT_C496858.pdf
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