Small package Schottky Barrier Diode JSCJ 1SS372 suitable for high speed switching applications
Key Attributes
Model Number:
1SS372
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
20uA@10V
Voltage - DC Reverse (Vr) (Max):
10V
Voltage - Forward(Vf@If):
300mV@5mA
Current - Rectified:
100mA
Mfr. Part #:
1SS372
Package:
SOT-323
Product Description
Product Overview
The 1SS372 is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, featuring a small package and low forward voltage. It is designed for high-speed switching applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: 1SS372
- Package Type: SOT-323
- Marking: N9
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| DC Blocking Voltage | VR | 10 | V | |||
| Forward Continuous Current | IO | 100 | mA | |||
| Peak Forward Current | IFM | 200 | mA | |||
| Non-repetitive Peak Forward Surge Current | IFSM | @t=8.3ms | 1 | A | ||
| Power Dissipation | PD | 100 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 1000 | /W | |||
| Junction Temperature | Tj | 125 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Reverse voltage | V(BR) | IR=100A | 10 | V | ||
| Reverse current | IR | VR=10V | 20 | A | ||
| Forward voltage | VF | IF=1mA | 0.18 | V | ||
| Forward voltage | VF | IF=5mA | 0.3 | V | ||
| Forward voltage | VF | IF=100mA | 0.5 | V | ||
| Total capacitance | Ctot | VR=0V,f=1MHz | 40 | pF |
2410121314_JSCJ-1SS372_C77277.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
