Fast switching single diode JSCJ BAS16TW SOT363 package ideal for general purpose electronic circuit
Key Attributes
Model Number:
BAS16TW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
3 Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16TW
Package:
SOT-363
Product Description
Product Overview
These are single diodes in a SOT-363 package, designed for general-purpose switching applications. They offer fast switching speeds and high conductance, making them suitable for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-363
- Marking (MMBD4148TW): KA2
- Marking (BAS16TW): KA2
- Molding Compound: Solid dot indicates Green molding compound device; if none, it's a normal device.
- Pin 1 Indicator: Solid dot indicates Pin 1.
- Date: March 2016
- Website: www.cj-elec.com
Technical Specifications
| Parameter | Symbol | MMBD4148TW / BAS16TW (Min) | MMBD4148TW / BAS16TW (Typ) | MMBD4148TW / BAS16TW (Max) | Unit | Conditions |
| Reverse breakdown voltage | V(BR) | 75 | V | IR=10A | ||
| Forward voltage | VF1 | 0.715 | V | IF=1mA | ||
| Forward voltage | VF2 | 0.855 | V | IF=10mA | ||
| Forward voltage | VF3 | 1.0 | V | IF=50mA | ||
| Forward voltage | VF4 | 1.25 | V | IF=150mA | ||
| Reverse current | IR1 | 1 | A | VR=75V | ||
| Reverse current | IR2 | 25 | nA | VR=20V | ||
| Capacitance between terminals | CT | 2 | pF | VR=0V,f=1MHz | ||
| Reverse recovery time | trr | 4 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 | ||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |||
| Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 75 | V | |||
| RMS Reverse Voltage | VR(RMS) | 53 | V | |||
| Forward Continuous Current | IFM | 300 | mA | |||
| Average Rectified Output Current | IO | 150 | mA | |||
| Forward Surge Current @t=8.3ms | IFSM | 2.0 | A | |||
| Power Dissipation | Pd | 200 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | |||
| Peak Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 |
2410121341_JSCJ-BAS16TW_C68955.pdf
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