switching diode JSCJ 1SS196 designed for electronic circuits requiring fast recovery and low voltage
Key Attributes
Model Number:
1SS196
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
1.6ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS196
Package:
SOT-23
Product Description
Product Overview
The 1SS196 is a switching diode from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed for high-speed applications. It features a low forward voltage and fast reverse recovery time, making it suitable for various electronic circuits requiring efficient switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: 1SS196
- Package: SOT-23
- Marking: G3
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions | |
| Non-Repetitive Peak Reverse Voltage | VRM | 85 | V | ||
| DC Blocking Voltage | VR | 80 | V | ||
| Forward Continuous Current | IFM | 300 | mA | ||
| Average Rectified Output Current | IO | 100 | mA | ||
| Power Dissipation | PD | 150 | mW | ||
| Operation Junction and Storage Temperature Range | T J ,TSTG | -55~+150 | |||
| Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms | |
| Reverse breakdown voltage | V (BR) | 80 | V | IR=100A | |
| Forward voltage | VF1 | 0.60 | V | IF=1mA | |
| Forward voltage | VF2 | 0.72 | V | IF=10mA | |
| Forward voltage | VF3 | 0.90 | 1.2 | V | IF=100mA |
| Reverse current | IR1 | 0.1 | uA | VR=30V | |
| Reverse current | IR2 | 0.5 | uA | VR=80V | |
| Capacitance between terminals | CT | 0.9 | 3.0 | pF | VR=0,f=1MHz |
| Reverse recovery time | t r r | 1.6 | 4.0 | ns | IF=IR=10mA,Irr=0.1IR |
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W |
2410121914_JSCJ-1SS196_C3031917.pdf
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