JSCJ AD SD106WS microminiature Schottky barrier diode with ESD protection and AEC Q101 certification
Key Attributes
Model Number:
AD-SD106WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
5uA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV
Current - Rectified:
200mA
Mfr. Part #:
AD-SD106WS
Package:
SOD-323
Product Description
Product Overview
The AD-SD106WS is a microminiature plastic-encapsulated Schottky barrier diode designed for low voltage, fast switching applications. It features a PN junction guard ring for protection against excessive voltage and electrostatic discharge, making it ideal for protecting MOS devices, steering, biasing, and coupling. This diode is AEC-Q101 qualified.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Origin: China
- Certifications: AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | Test condition | Min | Typ | Max | Unit |
| Non-repetitive peak reverse voltage | VRM | 30 | V | |||
| Forward current | IFM | 0.2 | A | |||
| Non-repetitive peak forward surge current | IFSM | @ t = 8.3ms | 1 | A | ||
| Power dissipation | Ptot | 250 | mW | |||
| Thermal resistance from junction to ambient | RJA | 400 | C/W | |||
| Operating junction temperature range | Tj | -40 | 125 | C | ||
| Storage temperature range | Tstg | -55 | 150 | C | ||
| Reverse breakdown voltage | VR | IR = 100A | 30 | V | ||
| Forward voltage | VF | IF = 2mA | 260 | mV | ||
| Forward voltage | VF | IF = 15mA | 320 | mV | ||
| Forward voltage | VF | IF = 100mA | 420 | mV | ||
| Forward voltage | VF | IF = 200 mA | 490 | 550 | mV | |
| Reverse current | IR | VR = 30V | 5 | A | ||
| Capacitance between terminals | CT | VR = 10V, f = 1MHz | 15 | pF |
2410121913_JSCJ-AD-SD106WS_C2975771.pdf
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