Multi chip diode surface mount device JSCJ BAV199DW with low leakage current green molding compound
Product Overview
The BAV199DW is a multi-chip diode designed for surface mount applications, ideally suited for automatic insertion. It features very low leakage current, making it a reliable component for various electronic circuits. The device is molded in green compound and indicated by a solid dot for Pin 1.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: K52
- Package: SOT-363
- Material: Plastic-Encapsulate Diodes
- Color: Green molding compound device
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Reverse breakdown voltage | V(BR) | IR= 100A | 85 | V | ||
| Reverse voltage leakage current | IR | VR=75V | 5 | nA | ||
| Forward voltage | VF | IF=1mA | 0.9 | V | ||
| Forward voltage | VF | IF=10mA | 1.0 | V | ||
| Forward voltage | VF | IF=50mA | 1.1 | V | ||
| Forward voltage | VF | IF=150mA | 1.25 | V | ||
| Total capacitance | Ctot | VR=0V, f=1MHz | 2 | pF | ||
| Reveres recovery time | trr | IF=IR=10mA Irr=0.1IR,RL=100 | 3 | s | ||
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | |||
| Working Peak Reverse Voltage | VRWM | 85 | V | |||
| DC Reverse Voltage | VR | 85 | V | |||
| Average Rectified Output Current | IO | 160 | mA | |||
| Non-Repetitive Peak Forward Surge Current | IFSM | @t=8.3ms | 1 | A | ||
| Power Dissipation | PD | 200 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
2410121931_JSCJ-BAV199DW_C3034809.pdf
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