Multi chip diode surface mount device JSCJ BAV199DW with low leakage current green molding compound

Key Attributes
Model Number: BAV199DW
Product Custom Attributes
Reverse Leakage Current (Ir):
5nA
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Recovery Time (trr):
3us
Voltage - DC Reverse (Vr) (Max):
85V
Operating Junction Temperature Range:
-55℃~+150℃
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
160mA
Mfr. Part #:
BAV199DW
Package:
SOT-363
Product Description

Product Overview

The BAV199DW is a multi-chip diode designed for surface mount applications, ideally suited for automatic insertion. It features very low leakage current, making it a reliable component for various electronic circuits. The device is molded in green compound and indicated by a solid dot for Pin 1.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: K52
  • Package: SOT-363
  • Material: Plastic-Encapsulate Diodes
  • Color: Green molding compound device

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Reverse breakdown voltageV(BR)IR= 100A85V
Reverse voltage leakage currentIRVR=75V5nA
Forward voltageVFIF=1mA0.9V
Forward voltageVFIF=10mA1.0V
Forward voltageVFIF=50mA1.1V
Forward voltageVFIF=150mA1.25V
Total capacitanceCtotVR=0V, f=1MHz2pF
Reveres recovery timetrrIF=IR=10mA Irr=0.1IR,RL=1003s
Peak Repetitive Reverse VoltageVRRM85V
Working Peak Reverse VoltageVRWM85V
DC Reverse VoltageVR85V
Average Rectified Output CurrentIO160mA
Non-Repetitive Peak Forward Surge CurrentIFSM@t=8.3ms1A
Power DissipationPD200mW
Thermal Resistance from Junction to AmbientRJA625/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150

2410121931_JSCJ-BAV199DW_C3034809.pdf

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