High Voltage Plastic Encapsulated Pin Diode JSCJ AD BAP64 05 for RF Resistor and Switch Applications
Key Attributes
Model Number:
AD-BAP64-05
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@175V
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
175V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
1.1V@50mA
Current - Rectified:
100mA
Mfr. Part #:
AD-BAP64-05
Package:
SOT-23
Product Description
Product Overview
The AD-BAP64-04/05/06 is a series of plastic-encapsulated pin diodes designed for high-voltage, current-controlled applications. These diodes serve as RF resistors in attenuators and switches, offering low capacitance, low forward resistance, and low series inductance, making them suitable for applications up to 3 GHz. They are AEC-Q101 qualified.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Product Series: AD-BAP64-04/05/06
- Encapsulation: Plastic
- Qualification: AEC-Q101
Technical Specifications
| Parameter | Symbol | AD-BAP64-04/05/06 | Unit | Test Condition |
| Collector-base voltage | VR | 175 | V | |
| Collector continuous current | IF | 100 | mA | |
| Power dissipation | PD | 250 | mW | |
| Thermal resistance junction to ambient | RJA | 500 | C/W | |
| Operating junction and storage temperature range | Tj, Tstg | -55 ~ 150 | C | |
| Forward Voltage | VF | 1.1 | V | IF = 50mA |
| Reverse Current | IR1 | 10 | A | VR1 = 175V |
| Reverse Current | IR2 | 1 | A | VR1 = 20V |
| Diode Capacitance | Cd1 | 0.52 | pF | VR = 0V, f = 1MHz |
| Diode Capacitance | Cd2 | 0.5 | pF | VR = 1V, f = 1MHz |
| Diode Capacitance | Cd3 | 0.35 | pF | VR = 20V, f = 1MHz |
| Diode Forward Resistance | Rd1 | 40 | IF = 0.5mA, f = 100MHz | |
| Diode Forward Resistance | Rd2 | 20 | IF = 1mA, f = 100MHz | |
| Diode Forward Resistance | Rd3 | 3.8 | IF = 10mA, f = 100MHz | |
| Diode Forward Resistance | Rd4 | 1.35 | IF = 100mA, f = 100MHz | |
| Charge Carrier Life Time | L | 1.55 | s | When switched from IF = 10mA to IR = 6mA;RL = 100;measured at IR = 3mA |
| Series Inductance | LS | 1.4 | nH | IF = 10mA, f = 100MHz |
2411121102_JSCJ-AD-BAP64-05_C2975634.pdf
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