High Current Capability Schottky Barrier Rectifier JSCJ SBDD1060CT with Guard Ring Die Construction
Key Attributes
Model Number:
SBDD1060CT
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@60V
Voltage - DC Reverse (Vr) (Max):
60V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
670mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBDD1060CT
Package:
TO-252-2
Product Description
Product Overview
The SBDD1060CT is a Schottky Barrier Rectifier featuring low power loss and high efficiency. It offers high current capability and a low forward voltage drop, making it suitable for applications requiring efficient power rectification. The device incorporates a guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBDD1060CT
- Marking: D1060CT
- Packaging: TO-252-2L Plastic-Encapsulate Diodes
- Molding Compound: Solid dot = Green molding compound device if none, the normal device
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak repetitive reverse voltage | VRRM | 60 | V | |||
| Working peak reverse voltage | VRWM | 60 | V | |||
| DC blocking voltage | VR | 60 | V | |||
| RMS reverse voltage | VR(RMS) | 42 | V | |||
| Average rectified output current | IO | 10 | A | |||
| Non-Repetitive peak forward surge current | IFSM | 8.3ms half sine wave | 100 | A | ||
| Forward voltage | VF | IF=3A | 0.57 | 0.67 | V | |
| Forward voltage | VF | IF=5A | 0.50 | 0.70 | V | |
| Reverse current | IR | VR=60V | 0.0001 | 0.1 | mA | |
| Thermal resistance from junction to case | RJC | 10 | /W | |||
| Thermal resistance from junction to ambient | RJA | 50 | /W | |||
| Junction temperature | Tj | 150 | ||||
| Storage temperature | Tstg | -55 | +150 | |||
| Total Capacitance | CTOT | VR=10V, f=1MHz | 100 | pF |
2410121814_JSCJ-SBDD1060CT_C513350.pdf
Related Products
PNP Transistor Slkor BC858B SOT23 Package Suitable for Switching and AF Amplifier Applications
Product Overview The BC856-BC858 series are PNP transistors ideally suited for automatic insertion, switching, and AF amplifier applications. These devices offer a range of electrical characteristics suitable for various circuit designs. Product Attributes Brand: slkormicro Product Type: PNP ...
Power Management Device SLkor SL10N06A Trench Power MV MOSFET Featuring Low RDS ON and Thermal Package
Product OverviewThe SL10N06A is a Trench Power MV MOSFET featuring a high-density cell design for low RDS(ON) and an excellent package for heat dissipation. It is designed for applications such as DC-DC converters and power management functions.Product AttributesBrand: SLKOR MicroModel: SL10N06ATech...
P Channel MOSFET Power Management Device Slkor SL05P10A Featuring Low RDSon and Excellent Stability
Product OverviewThe SL05P10A is a P-Channel MOSFET designed for power management applications. It features split gate trench MOSFET technology, offering low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This makes it ideal for portable equipment and other ...
Trench Power LV MOSFET Slkor SL3406 N Channel Device Suitable for Load Switching and Power Management
Product Overview The SL3406 is an N-Channel Power MOSFET utilizing Trench Power LV MOSFET technology. It features a high-density cell design for low RDS(ON) and high-speed switching capabilities. This MOSFET is suitable for applications such as battery protection, load switching, and power ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
