Schottky Barrier Rectifier JSCJ SBDB10200CT Offering Loss and High Current Capability for Electronics

Key Attributes
Model Number: SBDB10200CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@200V
Non-Repetitive Peak Forward Surge Current:
120A
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
890mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBDB10200CT
Package:
TO-263-2L
Product Description

Product Overview

The SBDB10200CT is a Schottky Barrier Rectifier designed for high-efficiency applications. It features low power loss, high current capability, and a low forward voltage drop, making it suitable for various power supply and rectification circuits. The device utilizes a Guard Ring Die Construction for transient protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Product Code: SBDB10200CT
  • Package: TO-263-2L
  • Material: Plastic-Encapsulate Diode
  • Molding Compound: Green (if solid dot present)
  • Origin: China (implied by manufacturer location)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Peak repetitive reverse voltageVRRM200V
Working peak reverse voltageVRWMV
DC blocking voltageVR200V
RMS reverse voltageVR(RMS)140V
Average rectified output currentIO10A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM100A
Junction temperatureTj150
Storage temperatureTstg-55+150
Reverse voltage breakdownV(BR)IR=0.1mA200V
Reverse currentIRVR=200V0.1mA
Forward voltageVFIF=3A, Tj=250.660.80V
Forward voltageVFIF=3A, Tj=1250.720.84V
Forward voltageVFIF=5A, Tj=250.720.89V
Forward voltageVFIF=5A, Tj=1250.801.0V
Thermal resistance junction to ambientRJA62.5/W
Thermal resistance junction to caseRJCTc=252.0/W
Total CapacitanceCTOTf=1MHz, Tj=25100pF
Total CapacitanceCTOTf=1MHz, Tj=125120pF

2410121743_JSCJ-SBDB10200CT_C5295513.pdf

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