Low current rectifier diode JSCJ RB751V-40 suitable for low voltage power supply applications

Key Attributes
Model Number: RB751V-40
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200mA
Reverse Leakage Current (Ir):
500nA@30V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB751V-40
Package:
SOD-323
Product Description

Product Overview

The RB751V-40 is a low current rectifier Schottky barrier diode designed for low voltage, low inductance applications, particularly in power supplies. It offers efficient rectification with low forward voltage and reverse current characteristics.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Origin: China
  • Material: Plastic Encapsulate Diodes
  • Color: Green molding compound device (indicated by solid dot), normal device if none.
  • Marking: Bar indicates the cathode.

Technical Specifications

ParameterSymbolLimit/ValueUnitConditions
Maximum Ratings and Electrical Characteristics (Single Diode)Peak reverse voltage40V@Ta=25
DC reverse voltage30V@Ta=25
Mean rectifying current0.03A@Ta=25
Non-repetitive Peak Forward Surge Current0.2A@t=8.3ms
Operating Junction Temperature Range-40 ~ +125
Storage Temperature Range-55 ~ +150
Power dissipation200mW@Ta=25
Electrical RatingsForward voltage0.37VIF=1mA
Reverse current0.5AVR=30V
Capacitance between terminals2pFVR=1V, f=1MHz
Thermal ResistanceJunction to Ambient500/W

2410121919_JSCJ-RB751V-40_C77353.pdf

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