Plastic Encapsulated Schottky Diode Array JSCJ BAS70BRW Featuring PN Junction Guard Ring Protection

Key Attributes
Model Number: BAS70BRW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100mA
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Mfr. Part #:
BAS70BRW
Package:
SOT-363
Product Description

Product Overview

The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAS70 series are Schottky Barrier Diode Arrays housed in a SOT-363 plastic-encapsulated package. These diodes feature a low forward voltage drop, fast switching speeds, and a PN junction guard ring for transient and ESD protection. They are available in lead-free versions and are suitable for various electronic applications requiring efficient diode performance.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package: SOT-363
  • Material: Plastic-Encapsulated
  • Color: Green molding compound device (indicated by solid dot) or normal device (no solid dot, Pin1 indicated).
  • Certifications: Available in Lead Free Version

Technical Specifications

ModelVRRM (V)VRWM (V)VR (V)VR(RMS) (V)IO (mA)IFSM (mA)PD (mW)RJA (/W)Tj ()Tstg ()V(BR) (V)IR (A)VF (V)Ctot (pF)trr (ns)
BAS70BRW /BAS70DW-04 / BAS70DW-05 / BAS70DW-06 / BAS70TW7070704970100200500125-55~+150700.10.41 (IF=1mA) / 1 (IF=15mA)2 (VR=0V,f=1MHz)5 (IF=IR=10mA to IR=1mA,Irr=0.1IR, RL=100)

2410121238_JSCJ-BAS70BRW_C77304.pdf

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