High speed switching diode JSCJ BAS21A in SOT23 package perfect for automatic insertion and general switching
Key Attributes
Model Number:
BAS21A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Diode Configuration:
1 Pair Common Anode
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21A
Package:
SOT-23
Product Description
Product Overview
The BAS21/A/C/S series are fast switching diodes in a SOT-23 surface mount package. They are ideally suited for automatic insertion and general-purpose switching applications, offering high conductance and a fast switching speed. The devices are available with different markings (JS2, JS3, JS4) for identification.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOT-23 Plastic-Encapsulate
- Molding Compound: Solid dot = Green molding compound device, normal device if none
Technical Specifications
| Parameter | Symbol | BAS21/A/C/S | Unit | Test Conditions | Min | Max |
| Repetitive peak reverse voltage | VRRM | 250 | V | |||
| Working peak reverse voltage | VRWM | 200 | V | |||
| DC blocking voltage | VR | 250 | V | |||
| Forward continuous current | IF | 250 | mA | |||
| Average rectified output current | IO | 200 | mA | |||
| Repetitive peak forward surge current | IFSM | 2.5 | A | @t=8.3ms | ||
| Power dissipation | PD | 625 | mW | @Ta=25 | ||
| Thermal resistance junction to ambient | RJA | 250 | /W | |||
| Junction temperature | TJ | 150 | ||||
| Storage temperature range | TSTG | -55~+150 | ||||
| Reverse breakdown voltage | V(BR) | 250 | V | IR= 100A | ||
| Reverse voltage leakage current | IR | 0.1 | A | VR=200V | ||
| Forward voltage | VF | 1.000 | V | IF=100mA | 0.900 | 1.150 |
| Forward voltage | VF | 1.250 | V | IF=200mA | 1.000 | 1.250 |
| Diode capacitance | CD | 5 | pF | VR=0V, f=1MHz | ||
| Reveres recovery time | trr | 50 | ns | IF=IR=30mA,Irr=0.1IR,RL=100 |
2410121245_JSCJ-BAS21A_C68964.pdf
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