Compact high speed switching diode JSCJ DAP202 suitable for advanced electronic circuit designs
Key Attributes
Model Number:
DAP202
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
DAP202
Package:
SOT-23
Product Description
Product Overview
The DAP202 is a high-speed, high-reliability switching diode suitable for high packing density layouts. Its primary application is in high-speed switching circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23 Plastic-Encapsulate Diodes
- Marking: P (Solid dot = Green molding compound device, if none, the normal device)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Reverse Voltage | V(BR) | IR=100A | 80 | V | ||
| Reverse Current | IR | VR=70V | 0.1 | A | ||
| Forward Voltage | VF | IF=100mA | 1.2 | V | ||
| Total Capacitance | Ctot | VR=6V,f=1MHz | 3.5 | pF | ||
| Reverse Recovery Time | trr | IF= IR=5mA, VR=6V | 4 | ns | ||
| DC Blocking Voltage | VR | 80 | V | |||
| Continuous Forward Current | IO | 100 | mA | |||
| Peak Forward Current | IFM | 300 | mA | |||
| Non-repetitive Peak Forward Surge Current@t= 8.3ms | IFSM | 2 | A | |||
| Power Dissipation | PD | 200 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
2410121811_JSCJ-DAP202_C3034837.pdf
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