JSCJ SD101AWS diode featuring guard ring construction and dissipation for fast switching electronics

Key Attributes
Model Number: SD101AWS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
200nA@50V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101AWS
Package:
SOD-323
Product Description

Product Overview

The SD101AWS is a Schottky Barrier Diode featuring a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and very low reverse capacitance. It is suitable for various electronic applications requiring fast switching and low power loss.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Marking: S1
  • Package: SOD-323
  • Molding Compound: Green (if solid dot present)
  • Origin: China (implied by manufacturer location)

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Repetitive Peak Reverse VoltageVRRM60V
Working Peak Reverse VoltageVRWMV
DC Blocking VoltageVR60V
RMS reverse voltageVR(RMS)42V
Forward Continuous CurrentIFM15mA
Non-repetitive Peak Forward Surge CurrentIFSM@t=8.3ms2A
Power DissipationPDTA=25200mW
Thermal Resistance Junction to AmbientRJA500/W
Operating Junction Temperature RangeTj-40+125
Storage Temperature RangeTstg-50+150
Reverse voltageV(BR)IR=10A60V
Reverse currentIRVR=50V0.2A
Forward voltageVFIF=1mA0.41V
Forward voltageVFIF=15mA1V
Total capacitanceCtotVR=0V,f=1MHz2pF
Reverse recovery timetrrIF= IR=5mA, Irr=0.1IR, RL=1001ns

2410121931_JSCJ-SD101AWS_C2992004.pdf

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