Schottky Diode JSCJ BAS40 SOT23 Package with 200 Milliamp Forward Continuous Current and Fast Recovery
Key Attributes
Model Number:
BAS40
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAS40 series are SOT-23 plastic-encapsulated Schottky barrier diodes. They feature low forward voltage and fast switching speeds, making them suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23
- Diode Type: Schottky Barrier Diode
Technical Specifications
| Model | Marking | Peak Repetitive Peak Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Forward Continuous Current (IFM) | Power Dissipation (PD) | Junction Temperature (TJ) | Storage Temperature Range (TSTG) | Reverse Breakdown Voltage (V(BR)) | Reverse Voltage Leakage Current (IR) | Forward Voltage (VF) @ IF=1mA | Forward Voltage (VF) @ IF=40mA | Diode Capacitance (CD) | Reverse Recovery Time (trr) |
| BAS40 | 43 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
| BAS40-04 | 44 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
| BAS40-05 | 45 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
| BAS40-06 | 46 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
2410121308_JSCJ-BAS40_C77289.pdf
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