Plastic Encapsulated Schottky Diode JSCJ BAS40W-04 With Low Forward Voltage And Fast Switching Speed
Key Attributes
Model Number:
BAS40W-04
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
1 Pair Series Connection
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
100mA
Mfr. Part #:
BAS40W-04
Package:
SOT-323
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAS40W/-04/-05/-06 is a Schottky Barrier Diode in a SOT-323 Plastic-Encapsulated package. It features low forward voltage and fast switching, making it suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulated
- Package: SOT-323
- Marking: BAS40W (43), BAS40W-04 (44), BAS40W-05 (45), BAS40W-06 (46)
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Model | Peak Repetitive Peak Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Forward Continuous Current (IFM) | Power Dissipation (PD) | Junction Temperature (TJ) | Storage Temperature Range (TSTG) | Reverse Breakdown Voltage (V(BR)) @ IR=10A | Reverse Voltage Leakage Current (IR) @ VR=30V | Forward Voltage (VF) @ IF=1mA | Forward Voltage (VF) @ IF=40mA | Diode Capacitance (CD) @ VR=0,f=1MHz | Reverse Recovery Time (trr) @ Irr=1mA, IR=IF=10mA, RL=100 |
| BAS40W/-04/-05/-06 | 40 V | 40 V | 40 V | 200 mA | 150 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
2410121236_JSCJ-BAS40W-04_C77293.pdf
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