Electronic switching diode JSCJ BAS116 featuring low leakage current and medium speed switching time
Key Attributes
Model Number:
BAS116
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5nA@75V
Reverse Recovery Time (trr):
3us
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAS116
Package:
SOT-23
Product Description
Product Overview
The BAS116 is a switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for applications requiring low leakage current and medium speed switching times. Packaged in a SOT-23 plastic-encapsulated case, this diode is suitable for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer)
- Marking: JV
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Limit/Min | Typ | Max | Unit | Conditions |
| Peak Repetitive Peak Reverse Voltage | VRRM | 75 | V | |||
| Working Peak Reverse Voltage | VRWM | 75 | V | |||
| DC Blocking Voltage | VR | 75 | V | |||
| Forward Continuous Current | IFM | 200 | mA | |||
| Power Dissipation | PD | 225 | mW | @Ta=25 | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Reverse breakdown voltage | V(BR) | 75 | V | IR=100A | ||
| Forward voltage | VF1 | 0.9 | V | IF=1mA | ||
| Forward voltage | VF2 | 1 | V | IF=10mA | ||
| Forward voltage | VF3 | 1.1 | V | IF=50mA | ||
| Forward voltage | VF4 | 1.25 | V | IF=150mA | ||
| Reverse current | IR | 5 | nA | VR=75V | ||
| Diode capacitance | Ctot | 2 | pF | VR=0V,f=1MHz | ||
| Reverse recovery time | trr | 3 | s | IF=IR=10mA,Irr=0.1IR , RL=100 | ||
| Forward Surge Current @t=8.3ms Non-Repetitive Peak | IFSM | 2.0 | A |
2410121720_JSCJ-BAS116_C68953.pdf
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