Compact fast switching diode JSCJ BAV16W in SOD123 surface mount package for electronic applications
Key Attributes
Model Number:
BAV16W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV16W
Package:
SOD-123
Product Description
Product Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD presents the BAV16W/1N4148W fast switching diodes in a SOD-123 surface mount package. These diodes are ideally suited for automatic insertion and general-purpose switching applications, offering fast switching speed and high conductance. The marking for these diodes is T6 or T4.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-123
- Material: Plastic-Encapsulate
- Marking: T6, T4
Technical Specifications
| Parameter | Symbol | BAV16W/1N4148W | Unit | Conditions |
| Voltage | VRM | 100 | V | Non-Repetitive Peak Reverse Voltage |
| VRRM | 75 | V | Peak Repetitive Peak Reverse Voltage | |
| VRWM | 75 | V | Working Peak Reverse Voltage | |
| VR | 75 | V | DC Blocking Voltage | |
| VR(RMS) | 52.5 | V | RMS Reverse Voltage | |
| Current | IFM | 300 | mA | Forward Continuous Current |
| IO | 150 | mA | Average Rectified Output Current | |
| Surge Current | IFSM | 2.0 | A | Peak Forward Surge Current @t=1.0s |
| IFSM | 1.0 | A | Peak Forward Surge Current @t=1.0s | |
| Power Dissipation | Pd | 400 | mW | @Ta=25 |
| Thermal Resistance | RJA | 312 | /W | Junction to Ambient |
| Temperature | Tj | 150 | Junction Temperature | |
| Storage Temperature | TSTG | -55~+150 | Storage Temperature | |
| Forward Voltage | VF1 | 0.715 | V | IF=1mA |
| VF2 | 0.855 | V | IF=10mA | |
| VF3 | 1.0 | V | IF=50mA | |
| VF4 | 1.25 | V | IF=150mA | |
| Reverse Current | IR1 | 1 | A | VR=75V |
| IR2 | 25 | nA | VR=20V | |
| Capacitance | CT | 2 | pF | VR=0V,f=1MHz |
| Reverse Recovery Time | trr | 4 | ns | IF=IR=10mA Irr=0.1XIR,RL=100 |
2410121503_JSCJ-BAV16W_C8498.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
