100V Plastic Encapsulated Rectifier Diode JSCJ ES2B SMAG Super Fast Recovery Diode for Surge Current
Key Attributes
Model Number:
ES2B(SMAG)
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
950mV@2.0A
Current - Rectified:
2A
Mfr. Part #:
ES2B(SMAG)
Package:
SMAG
Product Description
Product Overview
The ES2A through ES2J series are Super Fast Recovery Rectifier Diodes designed for high surge current capability. These plastic-encapsulated diodes are suitable for rectifier applications and feature a color band denoting the cathode. They offer a wide voltage range from 50V to 600V.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: JIANGSU
- Material: Plastic-Encapsulate Diodes (SMAG)
- Polarity Marking: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Conditions | ES2A | ES2B | ES2C | ES2D | ES2E | ES2G | ES2H | ES2J |
| Maximum RMS Voltage | VRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | |
| Average Forward Current | IF(AV) | A | 60Hz Half-sine wave, Resistance load | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 27 | 35 | 50 | 75 | 105 | 140 | 210 | 280 |
| Peak Forward Voltage | VF | V | IF=0.5A, Ta=25 | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 | 0.95 |
| Peak Forward Voltage | VF | V | IF=2.0A, Ta=25 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 | 1.7 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =125 | 75 | 75 | 75 | 75 | 75 | 75 | 75 | 75 |
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A | 35 | 35 | 35 | 35 | 35 | 35 | 35 | 35 |
| Junction Capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| Thermal Resistance(Typical) | RJ-A | / W | Between junction and ambient | 75 | 75 | 75 | 75 | 75 | 75 | 75 | 75 |
| Thermal Resistance(Typical) | RJ-L | / W | Between junction and terminal | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 |
2410122008_JSCJ-ES2B-SMAG_C5356798.pdf
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