SMBF Plastic Encapsulated Rectifier Diode JSCJ RS4MBF 4A Average Forward Current 1000V Reverse Voltage

Key Attributes
Model Number: RS4MBF
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@1000V
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Recovery Time (trr):
500ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.3V@4A
Current - Rectified:
4A
Mfr. Part #:
RS4MBF
Package:
SMBF
Product Description

Product Overview

The RS4ABF thru RS4MBF series are fast recovery rectifier diodes in SMBF plastic encapsulation, offering high surge current capability. They are designed for rectifier applications with reverse voltage ratings from 50V to 1000V and an average forward current of 4A.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Product Series: RS4XBF (X: From A To M)
  • Marking: Color band denotes cathode
  • Package: SMBF Plastic-Encapsulate Diodes

Technical Specifications

ItemSymbolUnitTest ConditionsRS4ABFRS4BBFRS4DBFRS4GBFRS4JBFRS4KBFRS4MBF
Maximum RMS VoltageVRMSV-501002004006008001000
Repetitive Peak Reverse VoltageVRRMV-501002004006008001000
Average Forward CurrentIF(AV)A-4.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave, 1 cycle, Ta=25150
Junction TemperatureTJ-55 ~ +150
Storage TemperatureTSTG-55 ~ +150
Thermal Resistance(Typical)RJ-A/WBetween junction and ambient, IF =4.0A100
Peak Forward VoltageVFVIF = 4.0A, T=251.3
Peak Reverse CurrentIRRM1AVRM=VRRM, Ta =25500
Peak Reverse CurrentIRRM2AVRM=VRRM, Ta =12550
Typical junction capacitance per diodeCJpFMeasured at 1.0MHz and applied reverse voltage of 4.0 volts.150
Maximum reverse recovery timetrrnsIF=0.5A, IR=1.0A, IRR =0.25A250

2410121917_JSCJ-RS4MBF_C5293879.pdf

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