Fast Switching Schottky Diode JSCJ BAS40W SOT323 Package Low Forward Voltage Electronic Component

Key Attributes
Model Number: BAS40W
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40W
Package:
SOT-323
Product Description

Product Overview

The BAS40W series is a Schottky barrier diode designed for fast switching applications with low forward voltage. Available in SOT-323 package, these diodes offer efficient performance for various electronic circuits.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Package Type: SOT-323
  • Material: Plastic-Encapsulate Diodes
  • Marking: Varies by model (e.g., 43 for BAS40W, 46 for BAS40W-06)
  • Special Marking: Solid dot indicates Green molding compound device.

Technical Specifications

ParameterSymbolBAS40W/-04/-05/-06UnitTest Conditions
Peak repetitive peak reverse voltageVRRM40V@Ta=25
Working peak reverse voltageVRWM40V@Ta=25
DC blocking voltageVR40V@Ta=25
Forward continuous currentIFM200mA@Ta=25
Power dissipationPD150mW@Ta=25
Thermal resistance junction to ambientRJA667/W@Ta=25
Operating Junction Temperature RangeTJ-40 ~ +125
Storage Temperature RangeTSTG-55 ~ +150
Reverse breakdown voltageV(BR)40VIR= 10A
Reverse voltage leakage currentIR200nAVR=30V, Ta=25
Forward voltageVF0.900 - 1.100VIF=1mA, Ta=25
0.035 - 0.043IF=40mA, Ta=25
Diode capacitanceCD5pFVR=0,f=1MHz, Ta=25
Reverse recovery timetrr5nsIrr=1mA, IR=IF=10mA, RL=100

2410121714_JSCJ-BAS40W_C3034833.pdf

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