High Current Schottky Rectifier JSCJ SBDF10150CT with Plastic Encapsulation and Transient Protection
Key Attributes
Model Number:
SBDF10150CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Leakage Current (Ir):
100uA@150V
Voltage - DC Reverse (Vr) (Max):
105V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
800mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBDF10150CT
Package:
TO-220F
Product Description
Product Overview
The SBD10150CT and SBDF10150CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Codes: SBD10150CT, SBDF10150CT
- Marking: 10150CT XXXX (SBD10150CT), F10150CT XXXX (SBDF10150CT)
- Package Types: TO-220-3L, TO-220F
- Material: Plastic-Encapsulate Diodes
Technical Specifications
| Parameter | Symbol | Test Conditions | SBD10150CT | SBDF10150CT | Unit |
| Peak repetitive reverse voltage | VRRM | 150 | 150 | V | |
| Working peak reverse voltage | VRWM | 150 | 150 | V | |
| DC blocking voltage | VR | 150 | 150 | V | |
| RMS reverse voltage | VR(RMS) | 105 | 105 | V | |
| Average rectified output current | IO | 10 (2x5) | 10 (2x5) | A | |
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 120 | 120 | A | |
| Reverse voltage | V(BR) | IR=1mA | 150 | 150 | V |
| Reverse current | IR | VR=150V, Tj=25 | 2.0 | uA | |
| Reverse current | IR | VR=150V, Tj=125 | 100 | uA | |
| Forward voltage | VF | IF=5A, Tj=25 | 0.64 | 0.64 | V |
| Forward voltage | VF | IF=5A, Tj=125 | 0.78 | 0.78 | V |
| Forward voltage | VF | IF=3A, Tj=25 | 0.69 | 0.69 | V |
| Forward voltage | VF | IF=3A, Tj=125 | 0.87 | 0.87 | V |
| Junction temperature | Tj | 150 | 150 | ||
| Storage temperature | Tstg | -55~+150 | -55~+150 | ||
| Thermal resistance from junction to ambient | RJA | 62.5 | 62.5 | /W | |
| Thermal resistance from junction to case | RJc | Tc=25 | 2.0 | 2.0 | /W |
2410121810_JSCJ-SBDF10150CT_C2924066.pdf
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