Low reverse current Schottky barrier diode JSCJ DS521-30Y1 ideal for in mobile phones MP3 players and MDs
Key Attributes
Model Number:
DS521-30Y1
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
10uA@10V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
200mA
Mfr. Part #:
DS521-30Y1
Package:
WBFBP-02C-A
Product Description
Product Overview
This Schottky barrier diode is a small surface mounting type offering low reverse current and low forward voltage for high reliability. It is ideal for high-speed switching in detection applications and is suitable for portable equipment such as mobile phones, MP3 players, MDs, CD-ROMs, DVD-ROMs, and notebook PCs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: WBFBP-02C-A
- Type: Plastic-Encapsulate Diodes
- Origin: China (implied by manufacturer location)
Technical Specifications
| Symbol | Parameter | Limit | Unit | Test Condition | Min | Typ | Max |
| VRRM | Repetitive Peak Reverse Voltage | 30 | V | ||||
| VRWM | Working Peak Reverse Voltage | 30 | V | ||||
| VR(RMS) | RMS Reverse Voltage | 21 | V | ||||
| IO | Average Rectified Output Current | 200 | mA | ||||
| IFSM | Non-Repetitive Peak Forward Surge Current@ t=8.3ms | 0.5 | A | ||||
| Pd | Power Dissipation | 100 | mW | ||||
| RJA | Thermal Resistance from Junction to Ambient | 1000 | /W | ||||
| TJ | Operating Junction Temperature Range | -40 | +125 | ||||
| Tstg | Storage Temperature Range | -55 | +150 | ||||
| V(BR) | Reverse breakdown voltage | 30 | V | IR=100 A | |||
| VR=10V | |||||||
| IR | Reverse current | A | IF=10mA | 0.1 | |||
| IF=100mA | 0.35 | ||||||
| VF | Forward voltage | V | IF=10mA | 0.50 | |||
| IF=100mA | 0.55 | ||||||
| IF=200mA | 0.60 | ||||||
| CT | Capacitance between terminals | pF | Ta=25, f=1MHz |
2410121845_JSCJ-DS521-30Y1_C3031912.pdf
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