Fast switching Schottky diode JSCJ SD103CW with low forward voltage drop and guard ring construction
Product Overview
The SOD-123 series Schottky Barrier Diodes (SD103AW, SD103BW, SD103CW) offer low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. These diodes are suitable for various applications requiring efficient rectification and fast switching characteristics.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-123
- Material: Plastic-Encapsulate Diodes
- Marking: SD103AW:S4, SD103BW:S5, SD103CW:S6
- Cathode Indicator: Marking bar
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Symbol | Parameter | SD103AW | SD103BW | SD103CW | Unit |
| VRRM | Peak Repetitive Reverse Voltage | 40 | 30 | 20 | V |
| VRWM | Working Peak Reverse Voltage | 40 | 30 | 20 | V |
| VR(RMS) | RMS Reverse Voltage | 28 | 21 | 14 | V |
| IFM | Forward Continuous Current | 350 | mA | ||
| IFSM | Non-repetitive Peak Forward Surge Current@t= 8.3ms | 2 | A | ||
| PD | Power Dissipation | 400 | mW | ||
| RJA | Thermal Resistance from Junction to Ambient | 250 | /W | ||
| Tj | Operating Junction Temperature Range | -40 ~ +125 | |||
| Tstg | Storage Temperature Range | -55 ~ +150 | |||
| V(BR) | Reverse voltage (IR=100A) | 40 | 30 | 20 | V |
| IR | Reverse current (VR=30V for SD103AW, VR=20V for SD103BW, VR=10V for SD103CW) | 5 | A | ||
| VF | Forward voltage (IF=20mA) | 0.37 | V | ||
| VF | Forward voltage (IF=200mA) | 0.6 | V | ||
| Ctot | Total capacitance (VR=0V,f=1MHz) | 50 | pF | ||
| trr | Reverse recovery time (IF= IR=200mA, Irr=0.1IR, RL=100) | 10 | ns | ||
2410121714_JSCJ-SD103CW_C2910076.pdf
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