Low reverse current switching diode JSCJ BAV19WS in SOD 323 package designed for general purpose switching
Key Attributes
Model Number:
BAV19WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100nA@100V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV19WS
Package:
SOD-323
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD - SOD-323 SWITCHING DIODE
This switching diode, available in BAV19WS, BAV20WS, and BAV21WS models, is designed for general-purpose switching applications. It features low reverse current, fast switching speed, and a surface mount package ideally suited for automatic insertion.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOD-323
- Marking: BAV19WS (A8, T2), BAV20WS (A8, T3), BAV21WS (T2, T3)
- Molding Compound: Green (if solid dot present)
- Website: www.cj-elec.com
Technical Specifications
| Model | Symbol | Parameter | BAV19WS | BAV20WS | BAV21WS | Unit |
| Maximum Ratings | VRM | Non-Repetitive Peak Reverse Voltage | 120 | 200 | 250 | V |
| VRWM | Working Peak Reverse Voltage | 100 | 150 | 200 | V | |
| VR(RMS) | RMS Reverse Voltage | 71 | 106 | 141 | V | |
| IO | Average Rectified Output Current | 200 | mA | |||
| IFSM | Non-repetitive Peak Forward Surge Current @ t=8.3ms | 2.0 | A | |||
| Electrical Characteristics | IR | Reverse current (VR=100V/150V/200V) | 0.1 | 0.1 | 0.1 | uA |
| VF | Forward voltage (IF=100mA) | 1 | V | |||
| VF | Forward voltage (IF=200mA) | 1.25 | V | |||
| Ctot | Total capacitance (VR=0V,f=1MHz) | 5 | pF | |||
| Switching Characteristics | trr | Reverse recovery time (IF= IR =30mA, Irr=0.1*IR , RL=100) | 50 | ns | ||
| Thermal Characteristics | PD | Power Dissipation | 500 | mW | ||
| RJA | Thermal Resistance from Junction to Ambient | 250 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Storage Conditions | Tstg | Storage Temperature | -55~+150 | |||
2410121308_JSCJ-BAV19WS_C68973.pdf
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