High speed switching diode JSCJ DAN202U with low forward voltage and minimal leakage current
Key Attributes
Model Number:
DAN202U
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100nA@70V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
DAN202U
Package:
SOT-323
Product Description
DAN202U Switching Diode
The DAN202U is a high-speed switching diode available in SOT-323 packaging. It is suitable for high packing density layouts and offers high reliability. The device features a green molding compound if indicated, otherwise it is a normal device.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Packaging: SOT-323 Plastic-Encapsulate Diode
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Reverse breakdown voltage | V(BR) | IR= 100A | 80 | V | |
| Reverse voltage leakage current | IR | VR=70V | 0.1 | A | |
| Forward voltage | VF | IF=100mA | 1.2 | V | |
| Diode capacitance | CD | VR=6V, f=1MHz | 3.5 | pF | |
| Reverse recovery time | trr | VR=6V, IF=5mA | 4 | ns |
Maximum Ratings
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | VRM | 80 | V |
| DC Blocking Voltage | VR | 80 | V |
| Forward Continuous Current | IFM | 300 | mA |
| Average Rectified Output Current | IO | 100 | mA |
| Power Dissipation | PD | 200 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | TSTG | -55~+150 | |
| Thermal resistance (Junction to ambient) | RJA | 625 | /W |
| Forward Surge Current (@t=8.3ms Non-Repetitive Peak) | IFSM | 2.0 | A |
2410121317_JSCJ-DAN202U_C35906.pdf
Related Products
Slkor DTC143EE
Product OverviewDigital Transistors (NPN) with built-in bias resistors simplify circuit design by eliminating the need for external input resistors. These transistors feature thin-film resistors with complete isolation, allowing for negative biasing and minimizing parasitic effects. They are ideal ...
Slkor SL15T120FL
Product Overview The SL15T120FL/K is a high-performance power semiconductor device featuring FS Technology and low gate charge. It is designed for general-purpose inverters, induction heating (IH), and UPS applications. Key features include a typical saturation voltage (VCE(sat)) of 2.2V at IC=15A ...
power switching N Channel MOSFET Slkor SL60N06 with low on state resistance and high avalanche energy
Product OverviewThe SL60N06 is a high-performance N-Channel Power MOSFET designed for power switching applications. It features an ultra-low Rds(on) due to its high-density cell design, ensuring excellent efficiency. The device is fully characterized for avalanche voltage and current, offering good ...
P Channel MOSFET Power Management Device Slkor SL05P10A Featuring Low RDSon and Excellent Stability
Product OverviewThe SL05P10A is a P-Channel MOSFET designed for power management applications. It features split gate trench MOSFET technology, offering low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This makes it ideal for portable equipment and other ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
