Durable Schottky Barrier Diode JSCJ BAS40WS 43 with 40 Volt Peak Reverse Voltage and Plastic SOD 323
Key Attributes
Model Number:
BAS40WS 43
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40WS 43
Package:
SOD-323
Product Description
Product Overview
The BAS40WS is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low turn-on voltage, fast switching, and PN junction guard for transient and ESD protection. The plastic material has a UL Recognition Flammability Classification 94V-O.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: BAS40WS
- Type: SCHOTTKY BARRIER DIODE
- Package: SOD-323 Plastic-Encapsulate
- Material: Plastic
- Certifications: UL Recognition Flammability Classification 94V-O
- Marking: 43
- Cathode Indicator: Marking bar
- Molding Compound: Solid dot = Green (if present)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Reverse Voltage | VRRM | 40 | V | Peak Repetitive Peak Reverse Voltage |
| VRWM | 40 | V | Working Peak Reverse Voltage | |
| VR | 40 | V | DC Blocking Voltage | |
| Forward Continuous Current | IF | 200 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 600 | mA | @t=8.3ms |
| Power Dissipation | Pd | 200 | mW | |
| Thermal Resistance | RJA | 500 | /W | Junction to Ambient |
| Storage Temperature | TSTG | -55 ~ +150 | ||
| Reverse breakdown voltage | V (BR) | 40 | V | IR=10A |
| Forward voltage | VF1 | 0.38 | V | IF=1mA |
| VF2 | 0.5 | V | IF=10mA | |
| VF3 | 1 | V | IF=40mA | |
| Reverse current | IR | 20 - 200 | nA | VR=30V |
| Capacitance between terminals | CT | 4 - 5 | pF | VR=0V,f=1MHz |
| Reverse recovery time | trr | 5 | ns | IF=IR=10mA Irr=0.1XIR,RL=100 |
| Junction temperature | TJ | 125 |
2410121228_JSCJ-BAS40WS-43_C22648.pdf
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