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quality Ultrafast Recovery Rectifier JSCJ MUR10H60 for Power Factor Correction and Solar Inverter Applications factory
quality Ultrafast Recovery Rectifier JSCJ MUR10H60 for Power Factor Correction and Solar Inverter Applications factory

Ultrafast Recovery Rectifier JSCJ MUR10H60 for Power Factor Correction and Solar Inverter Applications

Key Attributes
Model Number: MUR10H60
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@600V
Non-Repetitive Peak Forward Surge Current:
160A
Reverse Recovery Time (trr):
24ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Pd - Power Dissipation:
68W
Voltage - Forward(Vf@If):
1.6V@10A
Current - Rectified:
10A
Mfr. Part #:
MUR10H60
Package:
TO-220-2L
Product Description

Product Overview

The MUR10H60 is a HYPERFAST RECTIFIER, FRED (Fast Recovery Epitaxial Diode) designed for high-efficiency applications. It features ultrafast recovery times, low recovery loss, low forward voltage, and low reverse leakage current. This device is specifically engineered to enhance the performance of power factor correction (PFC) and output rectification stages in EV/HEV battery charging stations, booster stages of solar inverters, and UPS applications. It is ideally suited for operation with MOSFETs or high-speed IGBTs.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Product Code: MUR10H60
  • Package: TO-220-2L Plastic-Encapsulate Diode
  • Marking: MUR10H60 (Device code), Solid dot (Green molding compound device if present)
  • Origin: China (implied by company name)

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Unit
VRRM Peak Repetitive Reverse Voltage 600 V
VR DC Blocking Voltage 600 V
IF(AV) Average Forward Current (TC=130) 10 A
IF(RMS) RMS Forward Current (TC=130) 14 A
IFSM Non-Repetitive Surge Forward Current (8.3ms 160 A
PD Power dissipation 68 W
RJC Thermal Resistance From Junction to Case 2.2 /W
Tj Operating Junction Temperature Range -55 +175
Tstg Storage Temperature Range -55 +175
V(BR) Reverse Voltage IR=100A 600 V
IR Reverse Current VR=600V, Tj=25 10 A
IR Reverse Current VR=600V, Tj=150 500 A
VF Forward Voltage IF=10A, Tj=25 1.3 1.6 V
VF Forward Voltage IF=10A, Tj=150 1.06 V
Ctot Total Capacitance VR=200V, f=1MHz 12 pF
trr Reverse Recovery time IF=0.5A, IR=1A,Irr=0.25A 32 ns
trr Reverse Recovery Time IF=1A,VR=30V, diF/dt =200A/us 24 ns
trr Reverse Recovery Time IF=10A, VR=400V, diF/dt=200A/s 76 ns
IRRM Max. Reverse Recovery Current IF=10A, VR=400V, diF/dt=200A/s 4.8 A
Qrr Reverse Recovery Charge IF=10A, VR=400V, diF/dt=200A/s 223 nC
trr Reverse Recovery Time IF=10A, VR=400V, diF/dt=200A/s, Tj=125 105 ns
IRRM Max. Reverse Recovery Current IF=10A, VR=400V, diF/dt=200A/s, Tj=125 8 A
Qrr Reverse Recovery Charge IF=10A, VR=400V, diF/dt=200A/s, Tj=125 495 nC
trr Reverse Recovery Time IF=10A, VR=400V, diF/dt=600A/s, Tj=125 60 ns
IRRM Max. Reverse Recovery Current IF=10A, VR=400V, diF/dt=600A/s, Tj=125 19 A
Qrr Reverse Recovery Charge IF=10A, VR=400V, diF/dt=600A/s, Tj=125 646 nC

2410122008_JSCJ-MUR10H60_C5355158.pdf

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