Low forward voltage drop Schottky Diode JSCJ SD101BWS with guard ring and small SOD323 package

Key Attributes
Model Number: SD101BWS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
200nA@40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward(Vf@If):
950mV@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101BWS
Package:
SOD-323
Product Description

Product Overview

The SD101BWS is a Schottky Barrier Diode featuring low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. It is housed in an ultra-small surface mount package (SOD-323).

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: S2
  • Package: SOD-323
  • Molding Compound: Green (indicated by solid dot), normal device (if none)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Peak Repetitive Reverse VoltageVRRM50V
Working Peak Reverse VoltageVRWMV
DC Blocking VoltageVR50V
RMS Reverse VoltageVR(RMS)35V
Forward Continuous CurrentIFM15mA
Non-repetitive Peak Forward Surge CurrentIFSM@t=8.3ms2A
Power DissipationPD200mW
Thermal Resistance Junction to AmbientRJA500/W
Operating Junction Temperature RangeTj-40+125
Storage Temperature RangeTstg-55+150
Reverse Voltage BreakdownV(BR)IR=10A50V
Reverse CurrentIRVR=40V0.2A
Forward VoltageVFIF=1mA0.40V
Forward VoltageVFIF=15mA0.95V
Total CapacitanceCtotVR=0V,f=1MHz2.1pF
Reverse Recovery TimetrrIF=5mA, IR=5mA, Irr=0.1IR, RL=1001ns

2410121717_JSCJ-SD101BWS_C5295548.pdf

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