Schottky diode JSCJ SD101CW featuring guard ring construction low forward voltage and fast switching
Key Attributes
Model Number:
SD101CW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
900mV@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101CW
Package:
SOD-123
Product Description
Product Overview
The SD101CW is a Schottky Barrier Diode in a SOD-123 plastic-encapsulated package. It features a low forward voltage drop, guard ring construction for transient protection, and negligible reverse recovery time, making it suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOD-123
- Marking: S3
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak Repetitive Peak Reverse Voltage | VRRM | 40 | V | |
| Working Peak Reverse Voltage | VRWM | 40 | V | |
| DC Blocking Voltage | VR | 40 | V | |
| RMS Reverse Voltage | VR(RMS) | 28 | V | |
| Forward Continuous Current | IFM | 15 | mA | @Ta=25 |
| Non-Repetitive Peak Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | Pd | 400 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 250 | /W | |
| Reverse breakdown voltage | VR | 40 | V | IR=10A |
| Forward voltage | VF | 0.39 | V | IF=1.0mA |
| Forward voltage | VF | 0.90 | V | IF=15mA |
| Reverse current | IR | 0.2 | A | VR=30V |
| Capacitance between terminals | CT | 2.2 | pF | VR=0V,f=1.0MHz |
| Reverse recovery time | trr | 1.0 | ns | IF=IR=5mA Irr=0.1XIR,RL=100 |
| Storage Temperature | TSTG | -55~+150 | ||
| Junction temperature | Tj | 125 |
2410121234_JSCJ-SD101CW_C77354.pdf
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