Schottky Diode JSCJ SBD20H150CT with 20 Amp Average Current and 150 Volt Peak Reverse Voltage Rating

Key Attributes
Model Number: SBD20H150CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
1uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
900mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBD20H150CT
Package:
TO-220-3L
Product Description

Product Overview

The SBD20H150CT and SBDF20H150CT are Schottky Barrier Rectifiers designed for high efficiency and low power loss. They feature high current capability and a low forward voltage drop, making them suitable for various power applications. The guard ring die construction provides transient protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: SBD20H150CT, SBDF20H150CT
  • Material: Plastic-Encapsulate Diode
  • Color: Green molding compound device (if applicable)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Peak repetitive reverse voltageVRRM150V
Working peak reverse voltageVRWM150V
DC blocking voltageVR150V
RMS reverse voltageVR(RMS)105V
Average rectified output currentIO20A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM200A
Thermal resistance from junction to ambientRJA75/W
Junction temperatureTj175
Storage temperatureTstg-55+175
Reverse voltageV(BR)IR = 1mA150V
Reverse currentIRVR = 150V, Tj = 250.5mA
Reverse currentIRVR = 150V, Tj = 1752.0mA
Forward voltageVFIF = 5A, Tj = 250.610.83V
Forward voltageVFIF = 10A, Tj = 250.781.0V
Forward voltageVFIF = 5A, Tj = 1500.690.90V
Forward voltageVFIF = 10A, Tj = 1501.01.2V
Thermal resistance from junction to caseRJcTc = 2550/W
ModelVRRMIOIFSMVF (Typ. @ IF=5A, Tj=25C)RJA (Typ.)Package
SBD20H150CT150V20A200A0.61V75/WTO-220-3L
SBDF20H150CT150V20A200A0.61V75/WTO-220F

2410121815_JSCJ-SBD20H150CT_C5295500.pdf

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