800 volt peak reverse voltage rectifier diode JSCJ US1K plastic encapsulated with 1 amp forward current
Key Attributes
Model Number:
US1K
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@800V
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
800V
Voltage - Forward(Vf@If):
1.7V@1.0A
Current - Rectified:
1A
Mfr. Part #:
US1K
Package:
SMAG
Product Description
High Efficient Rectifier Diodes
The US1A through US1M series are high-efficiency rectifier diodes designed for various rectification applications. These plastic-encapsulated diodes offer high surge current capability and are suitable for use in rectifier circuits. The product line features a voltage range from 50V to 1000V and an average forward current of 1A. The color band on the device denotes the cathode.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate Diodes
- Marking: US1X (X: From A To M)
- Polarity: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Condition | US1A | US1B | US1D | US1G | US1J | US1K | US1M |
| Repetitive Peak Reverse Voltage | VRRM | V | 50Hz Half-sine wave, R=1k, TL=75 | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| Average Forward Current | IF(AV) | A | Resistive or Inductive Load, TL=75 | 1.0 | ||||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 8.3ms Single Half Sine Wave, JEDEC Method | 30 | ||||||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | ||||||||
| Maximum RMS Voltage | VRMS | V | 50 | |||||||
| Peak Forward Voltage | VF | V | IF =1.0A, T=25 | 1.0 | ||||||
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 50 | ||||||
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =125 | 100 | ||||||
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A | 50 | ||||||
| Thermal Resistance(Typical) | RJ-A | /W | Between junction and ambient, P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | 70 | ||||||
| Thermal Resistance(Typical) | RJ-L | /W | Between junction and lead | 25 | ||||||
2410121844_JSCJ-US1K_C5293947.pdf
Related Products
Slkor DTC143ECA
Product OverviewThe Digital Transistor DTC(R1=R2 SERIES)CA is an epitaxial planar die construction NPN style digital transistor. It features built-in biasing resistors (R1=R2) and complementary PNP types are available (DTA). This device is also offered in a lead-free version and is suitable for ...
Slkor SL25T120FL
Product OverviewFeatures:Low gate chargeFS TechnologySaturation voltage: VCE(sat), typ= 1.75V @ IC=25A and TC=25RoHS productApplications:General purpose invertersInduction heating (IH)UPSBrandSLKORPackage TypeTO-247CertificationsRoHSAbsolute Maximum RatingsParameterSymbolUnitTc=25Tc=100NoteCollector...
Low RDSon P Channel MOSFET Slkor SL3139K Surface Mount Device Suitable for Portable Electronics
Product OverviewThe SL3139K is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on) for efficient switching and is operated at low logic level gate drive. This lead-free product is suitable for load/power switching, interfacing, logic switching, and battery management ...
switching Slkor SL4459 P Channel MOSFET with low gate voltage and robust current handling capability
Product OverviewThe SL4459 P-Channel MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 4.5V, making it suitable for load switch and PWM applications. This device provides high power and current handling capability...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
