Plastic Encapsulated Schottky Diode JSCJ AD-RB160M-60 with Low Reverse Current and AEC-Q101 Certification

Key Attributes
Model Number: AD-RB160M-60
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
15A
Reverse Leakage Current (Ir):
30uA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
580mV
Current - Rectified:
1A
Mfr. Part #:
AD-RB160M-60
Package:
SOD-123
Product Description

Product Overview

The AD-RB160M-60 is a plastic-encapsulated Schottky barrier diode designed for small power applications. It features low reverse current (IR) and is AEC-Q101 qualified, making it suitable for demanding automotive environments. The device is marked with 76, with the marking bar indicating the cathode.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Product Code: AD-RB160M-60
  • Material: Plastic-Encapsulated
  • Certifications: AEC-Q101 qualified
  • Marking: 76

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
DC blocking voltageVR60V
Forward currentIO1A
Non-repetitive peak forward surge currentIFSM@ t = 8.3ms15A
Power dissipationPD350mW
Thermal resistance from junction to ambientRJA1)286C/W
Thermal resistance from junction to caseRJC1)8C/W
Operating junction temperature rangeTj-40125C
Storage temperature rangeTstg-55150C
Forward voltageVFIF = 1A0.58V
Reverse currentIRVR = 60V30A

1) Measured with the device mounted on 1 inch2 FR-4 board with 1oz. single-side copper, in a still air environment with Ta = 25.

2) Pulse test.


2410122003_JSCJ-AD-RB160M-60_C2975585.pdf

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