Schottky Barrier Rectifier JSCJ SBDF20150LCTB with Low Forward Voltage Drop and High Current Capability
Key Attributes
Model Number:
SBDF20150LCTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
100uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
780mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDF20150LCTB
Package:
TO-220F
Product Description
Product Overview
The SBD20150LCTB and SBDF20150LCTB are Schottky Barrier Rectifiers designed for high-efficiency applications. They feature low power loss, high current capability, and a low forward voltage drop. The guard ring die construction provides transient protection. These rectifiers are suitable for various electronic applications requiring efficient rectification.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBD20150LCTB, SBDF20150LCTB
- Encapsulation: Plastic-Encapsulate Diodes
- Molding Compound: Green molding compound device (if marked with solid dot)
- Origin: China (implied by manufacturer website)
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Unit |
| SBD20150LCTB, SBDF20150LCTB | Peak repetitive reverse voltage (VRRM) | 150 | V | |||
| SBD20150LCTB, SBDF20150LCTB | Working peak reverse voltage (VRWM) | 150 | V | |||
| SBD20150LCTB, SBDF20150LCTB | DC blocking voltage (VR) | 150 | V | |||
| SBD20150LCTB, SBDF20150LCTB | RMS reverse voltage (VR(RMS)) | 62.5 | V | |||
| SBD20150LCTB, SBDF20150LCTB | Average rectified output current (IO) | 20 (2x10) | A | |||
| SBD20150LCTB, SBDF20150LCTB | Non-Repetitive peak forward surge current (IFSM) | 8.3ms half sine wave | 2.0 | A | ||
| SBD20150LCTB, SBDF20150LCTB | Thermal resistance from junction to ambient (RJA) | 50 | /W | |||
| SBD20150LCTB, SBDF20150LCTB | Thermal resistance from junction to case (RJc) | Tc=25 | 3.0 | /W | ||
| SBD20150LCTB, SBDF20150LCTB | Junction temperature (Tj) | 150 | ||||
| SBD20150LCTB, SBDF20150LCTB | Storage temperature (Tstg) | -55 | +150 | |||
| SBD20150LCTB, SBDF20150LCTB | Reverse voltage (V(BR)) | IR=1mA | 150 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Reverse current (IR) | VR=150V | 100 | uA | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=5A, Tj=25 | 0.78 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=5A, Tj=125 | 0.72 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=10A, Tj=25 | 0.85 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=10A, Tj=125 | 0.78 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=20A, Tj=25 | 1.05 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=20A, Tj=125 | 0.95 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=5A, Tj=25 | 0.64 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=5A, Tj=125 | 0.57 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=10A, Tj=25 | 0.75 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=10A, Tj=125 | 0.68 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=20A, Tj=25 | 0.90 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Forward voltage (VF) | IF=20A, Tj=125 | 0.80 | V | ||
| SBD20150LCTB, SBDF20150LCTB | Total capacitance (CTOT) | f = 1 MHz, Tj=25 | 1200 | pF | ||
| SBD20150LCTB, SBDF20150LCTB | Total capacitance (CTOT) | f = 1 MHz, Tj=125 | 900 | pF |
2410121810_JSCJ-SBDF20150LCTB_C2924077.pdf
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